IRLML6402TRPBF Detailed explanation of pin function specifications and circuit principle instructions

The part " IRLML6402 TRPBF" is a product from Infineon Technologies, a global leader in semiconductor solutions. The IRLML6402TRPBF is an N-channel MOSFET which is typically used for low-voltage, high-speed switching applications.

Package Type:

The "IRLML6402TRPBF" comes in a SOT-23 package. This is a small, surface-mount device package, which is commonly used for low-power and low-voltage MOSFETs .

Pin Function Specifications:

Here is a detailed description of the pin functions for the IRLML6402TRPBF MOSFET, including the functionality of each pin in the SOT-23 package (which has 3 pins):

Pin Number Pin Name Pin Function Description Pin 1 Gate (G) The Gate pin (G) is used to control the switching of the MOSFET. It requires a voltage greater than the source pin to turn on the MOSFET. When a positive voltage is applied to the gate, it allows current to flow from the drain to the source. Pin 2 Drain (D) The Drain pin (D) is where the current flows out of the MOSFET when it is on. The Drain is connected to the load in most applications. This pin carries the current from the source to the external circuit. Pin 3 Source (S) The Source pin (S) is the reference terminal of the MOSFET, and it is where current enters the device. For N-channel MOSFETs, the source is usually connected to the ground or low-voltage reference in the circuit.

Circuit Principle Explanation:

MOSFET Operation: N-channel MOSFET: The IRLML6402TRPBF is an N-channel MOSFET, which means that it uses electrons as charge carriers. The channel is formed between the source and drain when a voltage is applied to the gate. Threshold Voltage (Vgs(th)): The threshold voltage of the MOSFET is typically around 1.0-1.5V. This means the gate-source voltage must exceed this value to begin conducting. Drain-Source Current (Id): When the MOSFET is on, current flows from the drain to the source. The MOSFET behaves as a low-resistance path when the gate is driven high enough to turn it on. Switching Characteristics: When the gate voltage is greater than the source voltage by the threshold value, the MOSFET conducts. This allows current to flow from the drain to the source. This characteristic makes it ideal for use in switching circuits, including logic circuits and power supply applications.

FAQ (Frequently Asked Questions) for IRLML6402TRPBF:

Here are the 20 common questions regarding the IRLML6402TRPBF:

Q: What is the IRLML6402TRPBF? A: The IRLML6402TRPBF is an N-channel MOSFET manufactured by Infineon Technologies.

Q: What is the package type of the IRLML6402TRPBF? A: The IRLML6402TRPBF comes in a SOT-23 package.

Q: How many pins does the IRLML6402TRPBF have? A: The IRLML6402TRPBF has 3 pins: Gate, Drain, and Source.

Q: What is the threshold voltage of the IRLML6402TRPBF? A: The threshold voltage is typically between 1.0 and 1.5V.

Q: What is the maximum drain current of the IRLML6402TRPBF? A: The maximum drain current (Id) is 4.0A.

Q: What is the typical on-resistance (Rds(on)) of the IRLML6402TRPBF? A: The typical on-resistance (Rds(on)) is around 0.08Ω.

Q: Can the IRLML6402TRPBF be used for high-power applications? A: The IRLML6402TRPBF is suitable for low-power applications, but it is not designed for high-power applications.

Q: What is the maximum gate-source voltage for the IRLML6402TRPBF? A: The maximum gate-source voltage is ±12V.

Q: Is the IRLML6402TRPBF a logic-level MOSFET? A: Yes, the IRLML6402TRPBF is a logic-level MOSFET, which means it can be controlled directly by logic voltage levels (such as 3.3V or 5V).

Q: What is the typical application for the IRLML6402TRPBF? A: The IRLML6402TRPBF is commonly used in low-voltage, high-speed switching applications, such as power management circuits and logic circuits.

Q: What is the operating temperature range of the IRLML6402TRPBF? A: The operating temperature range is from -55°C to 150°C.

Q: Can the IRLML6402TRPBF be used in automotive applications? A: Yes, it is qualified for automotive applications under the AEC-Q101 standard.

Q: What is the maximum drain-source voltage of the IRLML6402TRPBF? A: The maximum drain-source voltage (Vds) is 20V.

Q: What is the power dissipation of the IRLML6402TRPBF? A: The maximum power dissipation is 1.25W.

Q: Can the IRLML6402TRPBF be used for high-frequency applications? A: Yes, the IRLML6402TRPBF has fast switching characteristics, making it suitable for high-frequency applications.

Q: How should the gate voltage be controlled for the IRLML6402TRPBF? A: The gate voltage should be controlled to be above the threshold voltage (1.0-1.5V) for the MOSFET to switch on.

Q: What is the gate charge of the IRLML6402TRPBF? A: The gate charge (Qg) is typically 6.0nC.

Q: What is the significance of the MOSFET’s "on" resistance? A: The "on" resistance (Rds(on)) is the resistance between the drain and source when the MOSFET is on. Lower Rds(on) leads to better efficiency.

Q: Is the IRLML6402TRPBF protected against electrostatic discharge (ESD)? A: Yes, the IRLML6402TRPBF has ESD protection, but precautions should still be taken during handling.

Q: What is the recommended maximum gate-source voltage for safe operation of the IRLML6402TRPBF? A: The recommended maximum gate-source voltage is ±8V to ensure safe operation.

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